Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001)

نویسندگان

  • L. V. Goncharova
  • M. Dalponte
  • T. Feng
  • T. Gustafsson
  • E. Garfunkel
  • P. S. Lysaght
چکیده

L.V. Goncharova,1,* M. Dalponte,1 T. Feng,1 T. Gustafsson,1 E. Garfunkel,2 P.S. Lysaght,3 and G. Bersuker3 1Departments of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA 2Department of Chemistry and Chemical Biology, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA 3Sematech, Austin, Texas 78741, USA (Received 30 November 2010; revised manuscript received 24 January 2011; published 25 March 2011)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrical characteristics of ultrathin Hafnium oxynitrides deposited on Si-substrate

Hafnium oxide and Hafnium oxynitrides thin films are deposited on a Si substrate using reactive sputtering. Compared with Hafnium dioxide, Hafnium oxynitrides showed excellent electrical characteristics such as low leakage current density and low capacitance equivalent oxide thickness. By X-ray photoelectron spectroscopy (XPS), we were able to confirm nitrogen incorporation in the oxide bulk an...

متن کامل

Epitaxial growth of single crystalline lattice-matched Pr0.9Y1.1O3 on SrO-passivated Si001: growth orientation and crystallization tailoring by interface engineering

In this work, SrO buffer layers were employed as an interface engineering approach to realize single crystalline mixed ternary rare earth bixbyite oxide (RE2O3) films on Si (001) substrate. Single crystalline mixed PrxY2-xO3 (x=0-2) has been successfully grown on Si (111) (Ref. 7). However, the formation of such mixed oxide can only be realized at >750 °C, therefore when it is directly grown on...

متن کامل

Photoemission measurements of Ultrathin SiO2 film at low take-off angles

The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...

متن کامل

Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer

This letter presents a record low flicker-noise spectral density in biaxial compressively strained p-channel 100-nm Lg Si0.50Ge0.50 quantum-well FETs (QWFETs) with ultrathin Si (∼2 nm) barrier layer and 1-nm EOT hafnium silicate gate dielectric. The normalized power spectral density of Id fluctuations (SId/I 2 d) in Si0.50Ge0.50 QWFETs exhibits significant improvement by ten times over surface ...

متن کامل

Process Optimization and Integration of Hfo2 and Hf-silicates

We have established in-line characterization techniques for analyzing the bulk and interface-charge properties of dielectric films, for process optimization. Surface charge analysis (SCA) is used to determine the densities of interface states, fixed charge, and near-interface traps in ultra-thin dielectrics, and is useful for tracking the influence of post-deposition processing on interface-cha...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011